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Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

Date

2000
Journal article
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dc.contributor.authorVantomme, Andre
dc.contributor.authorWu, Ming Fang
dc.contributor.authorHogg, S.
dc.contributor.authorLangouche, G.
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorWhite, M. E.
dc.contributor.authorO'Donnell, K. P.
dc.contributor.authorNistor, Leona
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorBender, Hugo
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.accessioned2021-10-14T14:12:12Z
dc.date.available2021-10-14T14:12:12Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4901
dc.identifier.urlhttp://nsr.mij.mrs.org/5S1/W11.38/
dc.source.beginpageW11.38
dc.source.journalMRS Internet Journal of Nitride Semiconductor Research
dc.source.volume5, Suppl. 1
dc.title

Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

dc.typeJournal article
dspace.entity.typePublication
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