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The relation between sodium and aluminum contamination and dielectric breakdown in MOS structures

dc.contributor.authorVermeire, Bert
dc.contributor.authorRotondaro, Antonio
dc.contributor.authorMertens, Paul
dc.contributor.authorVerhaverbeke, Steven
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-29T12:55:10Z
dc.date.available2021-09-29T12:55:10Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/490
dc.sourceIIOimport
dc.titleThe relation between sodium and aluminum contamination and dielectric breakdown in MOS structures
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage58
dc.source.endpage64
dc.source.conferenceProceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing
dc.source.conferencedate15/10/1993
dc.source.conferencelocationNew Orleans, LA USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 94-7


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