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A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides

dc.contributor.authorYang, N.
dc.contributor.authorHenson, W. K.
dc.contributor.authorWortman, J. J.
dc.date.accessioned2021-10-14T14:22:28Z
dc.date.available2021-10-14T14:22:28Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4959
dc.sourceIIOimport
dc.titleA comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1636
dc.source.endpage1644
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue8
dc.source.volume47
imec.availabilityPublished - open access


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