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A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides
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Authors
Yang, N.
;
Henson, W. K.
;
Wortman, J. J.
Issue
8
Journal
IEEE Trans. Electron Devices
Volume
47
Title
A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides
Publication type
Journal article
Embargo date
9999-12-31
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