Publication:
A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides
Date
| dc.contributor.author | Yang, N. | |
| dc.contributor.author | Henson, W. K. | |
| dc.contributor.author | Wortman, J. J. | |
| dc.date.accessioned | 2021-10-14T14:22:28Z | |
| dc.date.available | 2021-10-14T14:22:28Z | |
| dc.date.embargo | 9999-12-31 | |
| dc.date.issued | 2000 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/4959 | |
| dc.source.beginpage | 1636 | |
| dc.source.endpage | 1644 | |
| dc.source.issue | 8 | |
| dc.source.journal | IEEE Trans. Electron Devices | |
| dc.source.volume | 47 | |
| dc.title | A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | Original bundle
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| Publication available in collections: |