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A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides
Publication:
A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides
Date
2000
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Yang, N.
;
Henson, W. K.
;
Wortman, J. J.
Journal
IEEE Trans. Electron Devices
Abstract
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1896
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations
Metrics
Views
1896
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations