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p+poly-Si1-xGex gate material for future high-speed nanoscale CMOS circuits

dc.contributor.authorYousif, M. Y. A.
dc.contributor.authorWillander, M.
dc.contributor.authorLundgren, P.
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-14T14:23:38Z
dc.date.available2021-10-14T14:23:38Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4966
dc.sourceIIOimport
dc.titlep+poly-Si1-xGex gate material for future high-speed nanoscale CMOS circuits
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.source.peerreviewno
dc.source.beginpage419
dc.source.conferenceProceedings GHz 2000 Symposium.; Gothenburg, Sweden.
dc.source.conferencelocation
imec.availabilityPublished - imec


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