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Generation and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKaniava, Arvydas
dc.contributor.authorSimoen, Eddy
dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T12:55:42Z
dc.date.available2021-09-29T12:55:42Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/498
dc.sourceIIOimport
dc.titleGeneration and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage199
dc.source.endpage206
dc.source.conference2nd European Conference on Radiation and its Effects on Components and Systems - RADECS
dc.source.conferencedate13/09/1993
dc.source.conferencelocationSt. Malo France
imec.availabilityPublished - open access


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