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Highly chemical reactive ion etching of gallium nitride

dc.contributor.authorKarouta, F.
dc.contributor.authorJacobs, B.
dc.contributor.authorMoerman, I.
dc.contributor.authorJacobs, K.
dc.contributor.authorWeyher, J.L.
dc.contributor.authorPorowski, S.
dc.contributor.authorCrane, R.
dc.contributor.authorHageman, P.R.
dc.date.accessioned2021-10-14T14:29:14Z
dc.date.available2021-10-14T14:29:14Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4997
dc.sourceIIOimport
dc.titleHighly chemical reactive ion etching of gallium nitride
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageW11.76
dc.source.conferenceGaN and Related Alloys
dc.source.conferencedate28/11/1999
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 595


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