Now showing items 1-2 of 2

    • Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence 

      Bogdanowicz, Janusz; Oniki, Yusuke; Kenis, Karine; Puttarame Gowda, Pallavi; Mertens, Hans; Shamieh, Basel; Leon, Yonatan; Wormington, Matthew; Van der Meer, Juliette; Charley, Anne-Laure (2023)
    • Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails 

      Veloso, Anabela; Jourdain, Anne; Radisic, Dunja; Chen, Rongmei; Arutchelvan, Goutham; O'Sullivan, Barry; Arimura, Hiroaki; Stucchi, Michele; De Keersgieter, An; Hosseini, Maryam; Hopf, Toby; D'have, Koen; Wang, Shouhua; Dupuy, Emmanuel; Mannaert, Geert; Vandersmissen, Kevin; Iacovo, Serena; Marien, Philippe; Choudhury, Subhobroto; Schleicher, Filip; Sebaai, Farid; Oniki, Yusuke; Zhou, X.; Gupta, Anshul; Schram, Tom; Briggs, Basoene; Lorant, Christophe; Rosseel, Erik; Hikavyy, Andriy; Loo, Roger; Geypen, Jef; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Soulie, Jean-Philippe; Devriendt, Katia; Chan, BT; Demuynck, Steven; Hiblot, Gaspard; Van der Plas, Geert; Ryckaert, Julien; Beyer, Gerald; Dentoni Litta, Eugenio; Beyne, Eric; Horiguchi, Naoto (2022)