Browsing Articles by imec author "9d36b5231de3937ea47d540629451bef3cd2d1d3"
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Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI
Rinaudo, Pietro; Vaisman Chasin, Adrian; Franco, Jacopo; Wu, Zhicheng; Subhechha, Subhali; Arutchelvan, Goutham; Eneman, Geert; Yengula Venkata Ramana, Bhuvaneshwari; Rassoul, Nouredine; Delhougne, Romain; Kaczer, Ben; De Wolf, Ingrid; Kar, Gouri Sankar (2023) -
Deposition, Characterization, and Performance of Spinel InGaZnO4
Dekkers, Harold; van Setten, Michiel; Belmonte, Attilio; Vaisman Chasin, Adrian; Subhechha, Subhali; Rassoul, Nouredine; Glushkova, Anastasia; Delhougne, Romain; Kar, Gouri Sankar (2022-02-23) -
Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression
Kim, Donguk; Kim, Je-Hyuk; Choi, Woo Sik; Yang, Tae Jun; Jang, Jun Tae; Belmonte, Attilio; Rassoul, Nouredine; Subhechha, Subhali; Delhougne, Romain; Kar, Gouri Sankar; Lee, Wonsok; Cho, Min Hee; Ha, Daewon; Kim, Dae Hwan (2022) -
Effect of nitrogen doping on the structure of metastable /3-W on SiO2
Hon, K.; Couet, Sebastien; Vudya Sethu, Kiran Kumar; Swerts, Johan; Kar, Gouri Sankar (2021) -
Effect of tantalum spacer thickness and deposition conditions on the properties of MgO/CoFeB/Ta/CoFeB/MgO free layers
Devolder, Thibaut; Couet, Sebastien; Swerts, Johan; Mertens, Sofie; Rao, Siddharth; Kar, Gouri Sankar (2019) -
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices
Reale, G.; Belmonte, Attilio; Fantini, Andrea; Radhakrishnan, Janaki; Redolfi, Augusto; Devulder, Wouter; Nyns, Laura; Kundu, Shreya; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2021) -
Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Meal-Ferroelectric-Metal Capacitors
Walke, Amey; Popovici, Mihaela Ioana; Banerjee, Kaustuv; Clima, Sergiu; Kumbhare, Pankaj; Desmet, Johan; Meersschaut, Johan; Van den Bosch, Geert; Delhougne, Romain; Kar, Gouri Sankar; Van Houdt, Jan (2022-07-12) -
Electron beam metrology for advanced technology nodes
Lorusso, Gian; Horiguchi, Naoto; Boemmels, Juergen; Wilson, Chris; Van den Bosch, Geert; Kar, Gouri Sankar; Ohashi, Takeyoshi; Sutani, Takumichi; Watanabe, Ryota; Takemasa, Yoshikata; Ikota, Masami (2019) -
Endurance/retention trade-off on HfO2 / metal cap 1T1R bipolar RRAM
Chen, Yangyin; Goux, Ludovic; Clima, Sergiu; Govoreanu, Bogdan; Degraeve, Robin; Kar, Gouri Sankar; Fantini, Andrea; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride
McMitchell, Sean; Walke, Amey; Banerjee, Kaustuv; Mertens, Sofie; Piao, Xiaoyu; Mao, Ming; Katcko, Kostantine; Vellianitis, Georgios; Van Dal, Mark; Lin, Yu-Ming; Van den Bosch, Geert; Delhougne, Romain; Kar, Gouri Sankar (2023) -
Evidences of areal switching in Vacancy-Modulated Conductive Oxide (VMCO) memory
Celano, Umberto; Gastaldi, Carlotta; Govoreanu, Bogdan; Richard, Olivier; Bender, Hugo; Goux, Ludovic; Kar, Gouri Sankar; Vandervorst, Wilfried (2017) -
Experimental observation of back-hopping with reference layer flipping by high-voltage pulse in perpendicular magnetic tunnel junctions
Kim, Woojin; Couet, Sebastien; Swerts, Johan; Lin, Tsann; Tomczak, Yoann; Souriau, Laurent; Tsvetanova, Diana; Sankaran, Kiroubanand; Donadio, Gabriele Luca; Crotti, Davide; Van Beek, Simon; Rao, Siddharth; Goux, Ludovic; Kar, Gouri Sankar; Furnemont, Arnaud (2016) -
Exploration of Scandium Doping in Sb2Te3 for Phase Change Memory Application
Barci, Marinela; Leonelli, Daniele; Zhou, Xue; Wang, Xiaojie; Garbin, Daniele; Jayakumar, Ganesh; Witters, Thomas; Franchina Vergel, Nathali; Kundu, Shreya; Vadakupudhu Palayam, Senthil; Jiao, Huifang; Wu, Hao; Kar, Gouri Sankar (2022-11) -
Exploring Pareto-Optimal Hybrid Main Memory Configurations Using Different Emerging Memories
Alinezhad Chamazcoti, Saeideh; Gupta, Mohit; Oh, Hyungrock; Evenblij, Timon; Catthoor, Francky; Perumkunnil, Manu; Kar, Gouri Sankar; Furnemont, Arnaud (2023) -
Fault Attack Investigation on TaOx Resistive-RAM for Cyber Secure Application
Kumar, Ankit; Degraeve, Robin; Beckers, Arthur; Fantini, Andrea; Verbauwhede, Ingrid; Linten, Dimitri; Kar, Gouri Sankar (2023) -
Ferromagnetic resonance study of composite Co/Ni-FeCoB free layers with perpendicular anisotropy
Devolder, Thibaut; Liu, Enlong; Swerts, Johan; Couet, Sebastien; Lin, Tsann; Mertens, Sofie; Furnemont, Arnaud; Kar, Gouri Sankar; De Boeck, Jo (2016) -
Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
Kateel, Vaishnavi; Krizakova, Viola; Rao, Siddharth; Cai, Kaiming; Gupta, Mohit; Gama Monteiro Junior, Maxwel; Yasin, Farrukh; Soree, Bart; De Boeck, Jo; Couet, Sebastien; Gambardella, Pietro; Kar, Gouri Sankar; Garello, Kevin (2023) -
Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales
Krizakova, Viola; Garello, Kevin; Grimaldi, Eva; Kar, Gouri Sankar; Gambardella, Pietro (2020) -
Gilbert damping of high anisotropy Co/Pt multilayers
Devolder, Thibaut; Couet, Sebastien; Swerts, Johan; Kar, Gouri Sankar (2018) -
High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition
Popovici, Mihaela Ioana; Walke, Amey; Bizindavyi, Jasper; Meersschaut, Johan; Banerjee, Kaustuv; Potoms, Goedele; Katcko, Kostantine; Van den Bosch, Geert; Delhougne, Romain; Kar, Gouri Sankar; Van Houdt, Jan (2022)