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Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si

dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, Andre
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-14T16:36:07Z
dc.date.available2021-10-14T16:36:07Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5008
dc.sourceIIOimport
dc.titleBand alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si
dc.typeOral presentation
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.conferenceSymposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
dc.source.conferencelocation
imec.availabilityPublished - imec


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