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The impact of processing-induced defects on the electrical characteristics and the degradation of Si n+p junctions

dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKaniava, A.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T12:55:50Z
dc.date.available2021-09-29T12:55:50Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/500
dc.sourceIIOimport
dc.titleThe impact of processing-induced defects on the electrical characteristics and the degradation of Si n+p junctions
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage72
dc.source.endpage81
dc.source.conferenceProc. Symp. on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects
dc.source.conferencedate1/10/1993
dc.source.conferencelocationNew Orleans, LA USA
imec.availabilityPublished - imec
imec.internalnotesECS Proceedings


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