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Using adaptive resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors
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Using adaptive resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors
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Date
2001
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bakeroot, Benoit
;
Moens, P.
;
Vermandel, Miguel
;
Doutreloigne, Jan
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1972
since deposited on 2021-10-14
Acq. date: 2025-12-10
Citations
Metrics
Views
1972
since deposited on 2021-10-14
Acq. date: 2025-12-10
Citations