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Current-voltage characteristics of gate oxides after hard breakdown

dc.contributor.authorBearda, Twan
dc.contributor.authorWoerlee, P. H.
dc.contributor.authorWallinga, H.
dc.contributor.authorMertens, Paul
dc.date.accessioned2021-10-14T16:36:55Z
dc.date.available2021-10-14T16:36:55Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5046
dc.sourceIIOimport
dc.titleCurrent-voltage characteristics of gate oxides after hard breakdown
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Paul
dc.source.peerreviewno
dc.source.beginpage212
dc.source.endpage213
dc.source.conferenceExtended Abstracts of the 2001 International Conference on Solid State Devices and Materials - SSDM;
dc.source.conferencelocation
imec.availabilityPublished - imec


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