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Physical characterization of high-k gate stacks deposited on HF-last surfaces

dc.contributor.authorBender, Hugo
dc.contributor.authorConard, Thierry
dc.contributor.authorNohira, Hiroshi
dc.contributor.authorPétry, Jasmine
dc.contributor.authorRichard, Olivier
dc.contributor.authorZhao, Chao
dc.contributor.authorBrijs, Bert
dc.contributor.authorBesling, Wim
dc.contributor.authorDetavernier, C.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorChen, Jian
dc.contributor.authorKluth, Jon
dc.contributor.authorTsai, Wilman
dc.contributor.authorMaes, Jos
dc.date.accessioned2021-10-14T16:37:10Z
dc.date.available2021-10-14T16:37:10Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5054
dc.sourceIIOimport
dc.titlePhysical characterization of high-k gate stacks deposited on HF-last surfaces
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage86
dc.source.endpage92
dc.source.conferenceEctended Abstracts of the International Workshop on Gate Insulator. IWGI 2001
dc.source.conferencedate1/11/2001
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec


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