Some considerations on the growth of highly resistive GaN layers
dc.contributor.author | Bougrioua, Zahia | |
dc.contributor.author | Jacobs, Koen | |
dc.contributor.author | Cheyns, Jan | |
dc.contributor.author | Moerman, Ingrid | |
dc.contributor.author | Thruch, E. J. | |
dc.contributor.author | Wallis, R. H. | |
dc.contributor.author | Davies, R. A. | |
dc.date.accessioned | 2021-10-14T16:38:47Z | |
dc.date.available | 2021-10-14T16:38:47Z | |
dc.date.issued | 2001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5093 | |
dc.source | IIOimport | |
dc.title | Some considerations on the growth of highly resistive GaN layers | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Moerman, Ingrid | |
dc.contributor.orcidimec | Moerman, Ingrid::0000-0003-2377-3674 | |
dc.source.peerreview | no | |
dc.source.conference | GaN and Related Alloys 2000; MRS Fall Meeting 2000 Symposium. | |
dc.source.conferencelocation | ||
imec.availability | Published - imec |
Files in this item
Files | Size | Format | View |
---|---|---|---|
There are no files associated with this item. |