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High performance AlGaAs/InGaAs pseudomorphic HEMTs after epitaxial lift-off

dc.contributor.authorBaeyens, Yves
dc.contributor.authorBrys, Catherine
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorDemeester, Piet
dc.contributor.authorVan Rossum, Marc
dc.date.accessioned2021-09-29T13:04:11Z
dc.date.available2021-09-29T13:04:11Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/510
dc.sourceIIOimport
dc.titleHigh performance AlGaAs/InGaAs pseudomorphic HEMTs after epitaxial lift-off
dc.typeProceedings paper
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorNauwelaers, Bart
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.imecauthorDemeester, Piet
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage689
dc.source.endpage692
dc.source.conferenceCompound Semiconductors 1994. Proceedings of the 21st International Symposium
dc.source.conferencedate18/09/1994
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - open access
imec.internalnotesIOP Conference Series; Vol. 141


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