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GaAs and InP-based dual-gate HEMTs for high-gain amplifiers

dc.contributor.authorBaeyens, Yves
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorvan der Zanden, Koen
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorVan Rossum, Marc
dc.date.accessioned2021-09-29T13:04:11Z
dc.date.available2021-09-29T13:04:11Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/511
dc.sourceIIOimport
dc.titleGaAs and InP-based dual-gate HEMTs for high-gain amplifiers
dc.typeProceedings paper
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorNauwelaers, Bart
dc.contributor.imecauthorDe Raedt, Walter
dc.source.peerreviewno
dc.source.beginpage161
dc.source.endpage165
dc.source.conferenceIEEE 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO; 27 Nov. 1995; Londo
dc.source.conferencelocation
imec.availabilityPublished - imec


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