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γ-irradiation hardness of short channel NMOSFETs fabricated in a 0.5 µm SOI technology

dc.contributor.authorClaeys, C.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorEfremov, A.
dc.contributor.authorLitovchenko, V. G.
dc.contributor.authorEvtuth, A.
dc.contributor.authorKizjak, A.
dc.contributor.authorRassamakin, J.
dc.date.accessioned2021-10-14T16:42:08Z
dc.date.available2021-10-14T16:42:08Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5147
dc.sourceIIOimport
dc.titleγ-irradiation hardness of short channel NMOSFETs fabricated in a 0.5 µm SOI technology
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conferenceSymposium B of the E-MRS Spring Meeting 2001: Defect Engineering of Advanced Semiconductor Devices;
dc.source.conferencelocation
imec.availabilityPublished - imec


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