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Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current

dc.contributor.authorCrupi, Felice
dc.contributor.authorIannaccone, G.
dc.contributor.authorCrupi, Isodiana
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-14T16:44:08Z
dc.date.available2021-10-14T16:44:08Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5173
dc.sourceIIOimport
dc.titleCharacterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage1109
dc.source.endpage1113
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue6
dc.source.volume48
imec.availabilityPublished - imec


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