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Impact of fast neutron irradiation on the silicon p-n junction leakage and role of the diffusion reverse current

dc.contributor.authorCzerwinski, A.
dc.contributor.authorKatcki, J.
dc.contributor.authorRatajczak, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPoyai, Amporn
dc.contributor.authorClaeys, Cor
dc.contributor.authorOhyama, Hidenori
dc.date.accessioned2021-10-14T16:44:18Z
dc.date.available2021-10-14T16:44:18Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5175
dc.sourceIIOimport
dc.titleImpact of fast neutron irradiation on the silicon p-n junction leakage and role of the diffusion reverse current
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conferenceSymposium B of the E-MRS Spring Meeting 2001: Defect Engineering of Advanced Semiconductor Devices; June 5-8, 2001; Strasbourg,
dc.source.conferencelocation
imec.availabilityPublished - imec


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