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Impact of gate oxide nitridation process on 1/f noise in 0.18 micron CMOS

dc.contributor.authorDa Rold, Martina
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMertens, S.
dc.contributor.authorSchaekers, Marc
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-14T16:44:29Z
dc.date.available2021-10-14T16:44:29Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5177
dc.sourceIIOimport
dc.titleImpact of gate oxide nitridation process on 1/f noise in 0.18 micron CMOS
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.beginpage1933
dc.source.endpage1938
dc.source.journalMicroelectronics Reliability
dc.source.issue12
dc.source.volume41/42
imec.availabilityPublished - imec


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