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Study of the hot-carrier degradation performance of 0.35 μm fully overlapped LDD devices

dc.contributor.authorBellens, Rudi
dc.contributor.authorHabas, Predrag
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorMieville, Jean-Paul
dc.contributor.authorVan den bosch, G.
dc.date.accessioned2021-09-29T13:04:13Z
dc.date.available2021-09-29T13:04:13Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/517
dc.sourceIIOimport
dc.titleStudy of the hot-carrier degradation performance of 0.35 μm fully overlapped LDD devices
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage265
dc.source.endpage268
dc.source.journalMicroelectronic Engineering
dc.source.volume28
imec.availabilityPublished - open access
imec.internalnotesProceedings of the 9th Biennial Conference on Insulating Films on Semiconductors, June 7-10, 1995, Villard-de-Lans, France.


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