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Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM

dc.contributor.authorDe Gryse, O.
dc.contributor.authorClauws, P.
dc.contributor.authorLebedev, O.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorClaeys, C.
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-14T16:45:41Z
dc.date.available2021-10-14T16:45:41Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5191
dc.sourceIIOimport
dc.titleChemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage294
dc.source.endpage297
dc.source.journalPhysica B
dc.source.volume308
imec.availabilityPublished - imec
imec.internalnotesThe 21st International Conference on Defects in Semiconductors; 16-20 July 2001; Giessen, Germany


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