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Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications

dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-14T16:48:59Z
dc.date.available2021-10-14T16:48:59Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5228
dc.sourceIIOimport
dc.titleRelation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.source.peerreviewno
dc.source.beginpage360
dc.source.endpage366
dc.source.conference39th Annual International Reliability Physics Symposium; 30 April - 3 May 2001; Orlando, FL, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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