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dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorSchuler, Franz
dc.contributor.authorLorenzini, Martino
dc.contributor.authorWellekens, Dirk
dc.contributor.authorHendrickx, Paul
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorTempel, Georg
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-14T16:49:12Z
dc.date.available2021-10-14T16:49:12Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5230
dc.sourceIIOimport
dc.titleStatistical model for SILC and pre-breakdown current jumps in ultra-thin oxide layers
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorHendrickx, Paul
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage121
dc.source.endpage4
dc.source.conferenceIEDM Technical Digest
dc.source.conferencedate2/12/2001
dc.source.conferencelocationWashington, D.C. USA
imec.availabilityPublished - imec


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