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CoSi2 formation using a Ti capping layer - influence of processing conditions on CoSi2 nucleation

dc.contributor.authorDetavernier, C.
dc.contributor.authorVan Meirhaeghe, R.
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-14T16:50:53Z
dc.date.available2021-10-14T16:50:53Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5247
dc.sourceIIOimport
dc.titleCoSi2 formation using a Ti capping layer - influence of processing conditions on CoSi2 nucleation
dc.typeOral presentation
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.conferenceSymposium K of the MRS Spring Meeting: Gate Stack and Silicide Issues in Si Processing II; 16-20 April 2001; San Francisco, CA,
dc.source.conferencelocation
imec.availabilityPublished - imec


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