Formation of epitaxial CoSi2 by a Cr or Mo interlayer: comparison with a Ti interlayer
dc.contributor.author | Detavernier, C. | |
dc.contributor.author | Van Meirhaeghe, R. L. | |
dc.contributor.author | Cardon, F. | |
dc.contributor.author | Maex, Karen | |
dc.contributor.author | Bender, Hugo | |
dc.contributor.author | Brijs, Bert | |
dc.contributor.author | Vandervorst, Wilfried | |
dc.date.accessioned | 2021-10-14T16:51:05Z | |
dc.date.available | 2021-10-14T16:51:05Z | |
dc.date.issued | 2001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5249 | |
dc.source | IIOimport | |
dc.title | Formation of epitaxial CoSi2 by a Cr or Mo interlayer: comparison with a Ti interlayer | |
dc.type | Journal article | |
dc.contributor.imecauthor | Maex, Karen | |
dc.contributor.imecauthor | Bender, Hugo | |
dc.contributor.imecauthor | Vandervorst, Wilfried | |
dc.source.peerreview | no | |
dc.source.beginpage | 2146 | |
dc.source.endpage | 2150 | |
dc.source.journal | Journal of Applied Physics | |
dc.source.issue | 4 | |
dc.source.volume | 89 | |
imec.availability | Published - imec |
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