A new degradation model and lifetime extrapolation technique for lightly doped drain NMOSFETs under hot-carrier degradation
dc.contributor.author | Dreesen, R. | |
dc.contributor.author | Croes, Kris | |
dc.contributor.author | Manca, Jean | |
dc.contributor.author | De Ceuninck, Ward | |
dc.contributor.author | De Schepper, Luc | |
dc.contributor.author | Pergoot, A. | |
dc.contributor.author | Groeseneken, Guido | |
dc.date.accessioned | 2021-10-14T16:53:12Z | |
dc.date.available | 2021-10-14T16:53:12Z | |
dc.date.issued | 2001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5268 | |
dc.source | IIOimport | |
dc.title | A new degradation model and lifetime extrapolation technique for lightly doped drain NMOSFETs under hot-carrier degradation | |
dc.type | Journal article | |
dc.contributor.imecauthor | De Ceuninck, Ward | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.source.peerreview | no | |
dc.source.beginpage | 437 | |
dc.source.endpage | 443 | |
dc.source.journal | Microelectronics Reliability | |
dc.source.issue | 3 | |
dc.source.volume | 41 | |
imec.availability | Published - imec |
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