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On the use of indium and gallium as p-type dopants in Si 0.1 μm MOSFETs

dc.contributor.authorBiesemans, Serge
dc.contributor.authorKubicek, Stefan
dc.contributor.authorVan Laer, Joris
dc.contributor.authorLoosen, Fred
dc.contributor.authorGeenen, Luc
dc.contributor.authorMaex, Karen
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-09-29T13:04:16Z
dc.date.available2021-09-29T13:04:16Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/526
dc.sourceIIOimport
dc.titleOn the use of indium and gallium as p-type dopants in Si 0.1 μm MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorVan Laer, Joris
dc.contributor.imecauthorLoosen, Fred
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage357
dc.source.endpage359
dc.source.conferenceTechnical Digest Solid State Devices and Materials Conference - SSDM
dc.source.conferencedate21/08/1995
dc.source.conferencelocationOsaka Japan
imec.availabilityPublished - open access


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