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Comparison between SiNx:H and hydrogen passivation of electromagnetically casted multicrystalline silicon material

dc.contributor.authorFourmond, E.
dc.contributor.authorLemiti, M.
dc.contributor.authorLaugier, A.
dc.contributor.authorBilyalov, Renat
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-14T16:56:11Z
dc.date.available2021-10-14T16:56:11Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5295
dc.sourceIIOimport
dc.titleComparison between SiNx:H and hydrogen passivation of electromagnetically casted multicrystalline silicon material
dc.typeOral presentation
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.conferenceSymposium E of the E-MRS Spring Meeting 2001: Crystalline Silicon for Solar Cells; 5-8 June 2001; Strasbourg, France.
dc.source.conferencelocation
imec.availabilityPublished - imec


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