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Processing factors influencing the leakage current in shallow junction diodes for deep submicro-meter CMOS

dc.contributor.authorGrau, Lluis
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRooyackers, Rita
dc.contributor.authorClaeys, C.
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorRomano-Rodriguez, A.
dc.date.accessioned2021-10-14T16:59:01Z
dc.date.available2021-10-14T16:59:01Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5319
dc.sourceIIOimport
dc.titleProcessing factors influencing the leakage current in shallow junction diodes for deep submicro-meter CMOS
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage211
dc.source.endpage14
dc.source.journalJournal of Materials Science: Materials in Electronics
dc.source.issue4_6
dc.source.volume12
imec.availabilityPublished - imec


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