Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks
dc.contributor.author | Houssa, Michel | |
dc.contributor.author | Afanas'ev, V. V. | |
dc.contributor.author | Stesmans, Andre | |
dc.contributor.author | Heyns, Marc | |
dc.date.accessioned | 2021-10-14T17:02:54Z | |
dc.date.available | 2021-10-14T17:02:54Z | |
dc.date.issued | 2001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5349 | |
dc.source | IIOimport | |
dc.title | Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks | |
dc.type | Journal article | |
dc.contributor.imecauthor | Houssa, Michel | |
dc.contributor.imecauthor | Stesmans, Andre | |
dc.contributor.imecauthor | Heyns, Marc | |
dc.contributor.orcidimec | Houssa, Michel::0000-0003-1844-3515 | |
dc.source.peerreview | no | |
dc.source.beginpage | 3134 | |
dc.source.endpage | 3136 | |
dc.source.journal | Applied Physics Letters | |
dc.source.issue | 19 | |
dc.source.volume | 79 | |
imec.availability | Published - imec |
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