dc.contributor.author | Houssa, Michel | |
dc.contributor.author | Naili, Mohamed | |
dc.contributor.author | Heyns, Marc | |
dc.contributor.author | Stesmans, Andre | |
dc.date.accessioned | 2021-10-14T17:03:09Z | |
dc.date.available | 2021-10-14T17:03:09Z | |
dc.date.issued | 2001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5351 | |
dc.source | IIOimport | |
dc.title | Charge trapping in SiOx/ZrO2 and SiOx/TiO2 gate dielectric stacks | |
dc.type | Journal article | |
dc.contributor.imecauthor | Houssa, Michel | |
dc.contributor.imecauthor | Heyns, Marc | |
dc.contributor.imecauthor | Stesmans, Andre | |
dc.contributor.orcidimec | Houssa, Michel::0000-0003-1844-3515 | |
dc.source.peerreview | no | |
dc.source.beginpage | 2804 | |
dc.source.endpage | 2809 | |
dc.source.journal | Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers | |
dc.source.issue | 4B | |
dc.source.volume | 40 | |
imec.availability | Published - imec | |