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Stress-induced leakage current in ultrathin SiO2 layers and the hydrogen dispersive transport model

dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, Andre
dc.contributor.authorCarter, Richard
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-14T17:03:32Z
dc.date.available2021-10-14T17:03:32Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5354
dc.sourceIIOimport
dc.titleStress-induced leakage current in ultrathin SiO2 layers and the hydrogen dispersive transport model
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage3289
dc.source.endpage3291
dc.source.journalApplied Physics Letters
dc.source.issue21
dc.source.volume78
imec.availabilityPublished - imec


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