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Material parameters for analytical and numerical modelling of Si and strained SiGe heterostructure devices

dc.contributor.authorJain, Suresh
dc.contributor.authorMehra, Anupama
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMaes, Herman
dc.contributor.authorWillander, M.
dc.date.accessioned2021-10-14T17:05:01Z
dc.date.available2021-10-14T17:05:01Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5365
dc.sourceIIOimport
dc.titleMaterial parameters for analytical and numerical modelling of Si and strained SiGe heterostructure devices
dc.typeProceedings paper
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.beginpageAA4.24.1
dc.source.endpageAA4.24.6
dc.source.conferenceAdvances in Materials Technology and Modeling-Bridging over Multiple-Length and Time Scales
dc.source.conferencedate16/04/2001
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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