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Consistent model for short-channel nMOSFET post-hard-breakdown characteristics

dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorVan de Mieroop, Koen
dc.contributor.authorBearda, Twan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-14T17:07:53Z
dc.date.available2021-10-14T17:07:53Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5387
dc.sourceIIOimport
dc.titleConsistent model for short-channel nMOSFET post-hard-breakdown characteristics
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.source.peerreviewno
dc.source.beginpage121
dc.source.endpage122
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers; 12-14 June 2001; Kyoto, Japan.
dc.source.conferencelocation
imec.availabilityPublished - imec


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