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A comparative study of copper drift diffusion in plasma deposited a-SiC : H and Silicon Nitride

dc.contributor.authorLanckmans, Filip
dc.contributor.authorGray, William
dc.contributor.authorBrijs, Bert
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-14T17:13:26Z
dc.date.available2021-10-14T17:13:26Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5429
dc.sourceIIOimport
dc.titleA comparative study of copper drift diffusion in plasma deposited a-SiC : H and Silicon Nitride
dc.typeJournal article
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage329
dc.source.endpage335
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume55
imec.availabilityPublished - imec


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