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Extraction of the oxide charge density at front and back interfaces of SOI in nMOSFETs devices

dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.date.accessioned2021-10-14T17:19:08Z
dc.date.available2021-10-14T17:19:08Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5468
dc.sourceIIOimport
dc.titleExtraction of the oxide charge density at front and back interfaces of SOI in nMOSFETs devices
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference199th Meeting of the Electrochemical Society: 10th International Symposium on Silicon-on-Insulator Technology and Devices; 26 Ma
dc.source.conferencelocation
imec.availabilityPublished - imec


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