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AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments

dc.contributor.authorMistele, D.
dc.contributor.authorRotter, T.
dc.contributor.authorRöver, K. S.
dc.contributor.authorPaprotta, S.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorFedler, F.
dc.contributor.authorKlausing, H.
dc.contributor.authorSemchinova, O. K.
dc.contributor.authorStemmer, J.
dc.contributor.authorAderhold, J.
dc.contributor.authorGraul, J.
dc.date.accessioned2021-10-14T17:21:14Z
dc.date.available2021-10-14T17:21:14Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5482
dc.sourceIIOimport
dc.titleAlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments
dc.typeOral presentation
dc.source.peerreviewno
dc.source.conferenceMRS Fall Meeting 2001: Symposium I: GaN and related alloys; November 26-30, 2001; Boston, MA, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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