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Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

dc.contributor.authorNohira, Hiroshi
dc.contributor.authorTsai, Wilman
dc.contributor.authorBesling, Wim
dc.contributor.authorYoung, Edward
dc.contributor.authorPétry, Jasmine
dc.contributor.authorConard, Thierry
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorMaes, Jos
dc.contributor.authorTuominen, Marko
dc.date.accessioned2021-10-14T17:27:15Z
dc.date.available2021-10-14T17:27:15Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5521
dc.sourceIIOimport
dc.titleCharacterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
dc.typeOral presentation
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.conferenceSymposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
dc.source.conferencelocation
imec.availabilityPublished - imec


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