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Effects of high-temperature gamma ray irradiation on npn Si transistors

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorHirao, T.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.contributor.authorFukushima, Y.
dc.contributor.authorTanigawa, A.
dc.contributor.authorOnoda, S.
dc.date.accessioned2021-10-14T17:28:14Z
dc.date.available2021-10-14T17:28:14Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5527
dc.sourceIIOimport
dc.titleEffects of high-temperature gamma ray irradiation on npn Si transistors
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conferenceRADECS; 10-14 September 2001; Grenoble, France.
dc.source.conferencelocation
imec.availabilityPublished - imec


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