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Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth
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Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth
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Date
1995
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chollet, Frederic
;
André, E.
;
Vandervorst, Wilfried
;
Caymax, Matty
Journal
Journal of Crystal Growth
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1941
since deposited on 2021-09-29
1
last month
Acq. date: 2025-12-23
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Metrics
Views
1941
since deposited on 2021-09-29
1
last month
Acq. date: 2025-12-23
Citations