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Radiation damages of polycrystalline silicon films and NPN Si transistors by high-energy particle irradiation

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorNakabayashi, M.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorTanaka, T.
dc.contributor.authorHirao, T.
dc.contributor.authorOnada, S.
dc.contributor.authorKobayashi, K.
dc.date.accessioned2021-10-14T17:29:03Z
dc.date.available2021-10-14T17:29:03Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5532
dc.sourceIIOimport
dc.titleRadiation damages of polycrystalline silicon films and NPN Si transistors by high-energy particle irradiation
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1443
dc.source.endpage1448
dc.source.journalMicroelectronics Reliability
dc.source.issue9_10
dc.source.volume41
imec.availabilityPublished - imec
imec.internalnotesPaper from ESREF 2001


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