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Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth

dc.contributor.authorChollet, Frederic
dc.contributor.authorAndré, E.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-09-29T13:04:30Z
dc.date.available2021-09-29T13:04:30Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/553
dc.sourceIIOimport
dc.titleSi(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage161
dc.source.endpage167
dc.source.journalJournal of Crystal Growth
dc.source.issue1_4
dc.source.volume157
imec.availabilityPublished - open access
imec.internalnotesSymposium L on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference. 22-26 May 1995; Strasbourg, France


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