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Nanometer-scale roughness analysis of Si surfaces by TM-AFM for low-temperature epitaxy

dc.contributor.authorChollet, Frederic
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorAndré, E.
dc.date.accessioned2021-09-29T13:04:31Z
dc.date.available2021-09-29T13:04:31Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/554
dc.sourceIIOimport
dc.titleNanometer-scale roughness analysis of Si surfaces by TM-AFM for low-temperature epitaxy
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage263
dc.source.endpage270
dc.source.conferenceALTECH 95: Analytical Techniques for Semiconductor Materials and Process Characterization II. Proceedings of the Satellite Sympo
dc.source.conferencedate28/09/1995
dc.source.conferencelocationDen Haag The Netherlands
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 95-30


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