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Proton-irradiation effect on the electric-field enhancement of the generation lifetime in shallow p-n junction diodes

dc.contributor.authorPoyai, Amporn
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorKobayashi, K.
dc.contributor.authorOhyama, Hidenori
dc.date.accessioned2021-10-14T17:38:13Z
dc.date.available2021-10-14T17:38:13Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5589
dc.sourceIIOimport
dc.titleProton-irradiation effect on the electric-field enhancement of the generation lifetime in shallow p-n junction diodes
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage93
dc.source.endpage102
dc.source.conferenceCrystalline Defects and Contamination: Their Impact and Control in Device Manufacturing III. DECON 2001
dc.source.conferencelocationNuremberg Germany
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2001-29


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