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Diode analysis of high-energy boron implantation-induced P-well defects

dc.contributor.authorPoyai, Amporn
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorRooyackers, Rita
dc.contributor.authorBadenes, Gonçal
dc.date.accessioned2021-10-14T17:38:34Z
dc.date.available2021-10-14T17:38:34Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5591
dc.sourceIIOimport
dc.titleDiode analysis of high-energy boron implantation-induced P-well defects
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpageG507
dc.source.endpageG512
dc.source.journalJournal of the Electrochemical Society
dc.source.issue9
dc.source.volume148
imec.availabilityPublished - imec


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