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Quasi-non volatile flatband-voltage shift in metal-oxide-semiconductor capacitors with silicon-rich-oxide dielectric

dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorSleeckx, Erik
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-14T17:44:04Z
dc.date.available2021-10-14T17:44:04Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5623
dc.sourceIIOimport
dc.titleQuasi-non volatile flatband-voltage shift in metal-oxide-semiconductor capacitors with silicon-rich-oxide dielectric
dc.typeProceedings paper
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.source.peerreviewno
dc.source.beginpage383
dc.source.endpage386
dc.source.conferenceProceedings of the 31st European Solid-State Device Research Conference
dc.source.conferencedate11/09/2001
dc.source.conferencelocationNuremberg Germany
imec.availabilityPublished - imec


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